国家/地区 Singapore（7）
关键词 GRAPHENE（3） DIRAC EQUATION（2） GRAPHENE NANORIBBON（2）
HETEROJUNCTION（2） TUNNELING TRANSISTO.（2）
出版物 IEEE TRANSACTIONS O.（2）
出版时间 2010（3） 2012（3）
机构 NATL UNIV SI.（4） ASTAR（2）
作者 CHIN SK（7）

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

SOLIDSTATE ELECTRONICS

DA HX, LAM KT, SAMUDRA GS, LIANG GC, CHIN SK

Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

IEEE TRANSACTIONS ON ELECTRON DEVICES

DA HX, LAM KT, SAMUDRA G, CHIN SK, LIANG GC

Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-binding pi-bond model

NANOSCALE RESEARCH LETTERS

CHIN SK, LAM KT, SEAH D, LIANG GC

Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHIN SK, SEAH D, LAM KT, SAMUDRA GS, LIANG G

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

IEEE ELECTRON DEVICE LETTERS

LAM KT, SEAH D, CHIN SK, KUMAR SB, SAMUDRA G, YEO YC, LIANG G

Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

LAM KT, CHIN SK, SEAH DW, KUMAR SB, LIANG GC

Edge effects on quantum thermal transport in graphene nanoribbons: Tight-binding calculations

PHYSICAL REVIEW B

LAN JH, WANG JS, GAN CK, CHIN SK