国家/地区 Korea（9）
关键词
出版物 APPLIED PHYSICS LETTERS（11）
出版时间 2014（3） 2011（2） 2012（2） 2013（2）
机构 KOREA ADV IN.（9）
作者 CHO BJ（11）

High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy

APPLIED PHYSICS LETTERS

OH JG, HONG SK, KIM CK, BONG JH, SHIN J, CHOI SY, CHO BJ

Improvement of graphene-metal contact resistance by introducing edge contacts at graphene under metal

APPLIED PHYSICS LETTERS

SONG SM, KIM TY, SUL OJ, SHIN WC, CHO BJ

Work function tuning of metal/graphene stack electrode

APPLIED PHYSICS LETTERS

SONG SM, BONG JH, CHO BJ

Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

APPLIED PHYSICS LETTERS

SHIN WC, YOON T, MUN JH, KIM TY, CHOI SY, KIM TS, CHO BJ

Graphene as anode electrode for colloidal quantum dots based light emitting diodes

APPLIED PHYSICS LETTERS

KLEKACHEV AV, KUZNETSOV SN, ASSELBERGHS I, CANTORO M, MUN JH, CHO BJ, STESMANS AL, HEYNS MM, DE GENDT S

Physical-gap-channel graphene field effect transistor with high on/off current ratio for digital logic applications

APPLIED PHYSICS LETTERS

MUN JH, CHO BJ

Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

APPLIED PHYSICS LETTERS

SHIN WC, KIM TY, SUL O, CHO BJ

Dirac voltage tunability by Hf1-xLaxO gate dielectric composition modulation for graphene field effect devices

APPLIED PHYSICS LETTERS

OH JG, SHIN Y, SHIN WC, SUL O, CHO BJ

Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer

APPLIED PHYSICS LETTERS

SHIN WC, SEO S, CHO BJ

Wide memory window in graphene oxide charge storage nodes

APPLIED PHYSICS LETTERS

WANG S, PU J, CHAN DSH, CHO BJ, LOH KP