国家/地区 Korea（9）
关键词 GRAPHENE（3）
出版物 APPLIED PHYSICS LET.（4） ACS NANO（2）
出版时间 2011（11）
机构 GWANGJU INST.（3） SAMSUNG ADV .（3）
作者 CHUNG HJ（11）

A role for graphene in silicon-based semiconductor devices

NATURE

KIM K, CHOI JY, KIM T, CHO SH, CHUNG HJ

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

IEEE ELECTRON DEVICE LETTERS

KANG CG, LEE SK, LEE YG, HWANG HJ, CHO C, LIM SK, HEO J, CHUNG HJ, YANG H, SEO S, LEE BH

Robust bi-stable memory operation in single-layer graphene ferroelectric memory

APPLIED PHYSICS LETTERS

SONG EB, LIAN B, KIM SM, LEE S, CHUNG TK, WANG MS, ZENG CF, XU GY, WONG K, ZHOU Y, RASOOL HI, SEO DH, CHUNG HJ, HEO J, SEO S, WANG KL

Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition

PHYSICAL REVIEW B

HEO J, CHUNG HJ, LEE SH, YANG H, SEO DH, SHIN JK, CHUNG UI, SEO S, HWANG EH, DAS SARMA S

Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

NANOTECHNOLOGY

KANG CG, KANG JW, LEE SK, LEE SY, CHO CH, HWANG HJ, LEE YG, HEO J, CHUNG HJ, YANG H, SEO S, PARK SJ, KO KY, AHN J, LEE BH

Probing nanoscale conductance of monolayer graphene under pressure

APPLIED PHYSICS LETTERS

KWON S, CHOI S, CHUNG HJ, YANG H, SEO S, JHI SH, PARK JY

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

APPLIED PHYSICS LETTERS

LEE JK, CHUNG HJ, HEO J, SEO S, CHO IH, KWON HI, LEE JH

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

Band Gap Opening by Two-Dimensional Manifestation of Peierls Instability in Graphene

ACS NANO

LEE SH, CHUNG HJ, HEO J, YANG H, SHIN J, CHUNG UI, SEO S

Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY

HEO J, CHUNG HJ, LEE SH