国家/地区 Usa（5）
关键词
出版物 JOURNAL OF APPLIED .（2）
出版时间 2012（5）
机构 CARNEGIE MEL.（4）
作者 FEENSTRA RM（5）

Formation of graphene on SiC(000(1)over-bar) surfaces in disilane and neon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HE GW, SRIVASTAVA N, FEENSTRA RM

Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies

JOURNAL OF APPLIED PHYSICS

DANIELS KM, DAAS BK, SRIVASTAVA N, WILLIAMS C, FEENSTRA RM, SUDARSHAN TS, CHANDRASHEKHAR MVS

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG

Single-particle tunneling in doped graphene-insulator-graphene junctions

JOURNAL OF APPLIED PHYSICS

FEENSTRA RM, JENA D, GU G

Interface structure of graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

SRIVASTAVA N, HE GW, LUXMI, FEENSTRA RM