国家/地区 Usa（4）
关键词
出版物
出版时间 2014（4）
机构 CARNEGIE MEL.（2）
作者 FEENSTRA RM（4）

Theory of graphene-insulator-graphene tunnel junctions

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

DE LA BARRERA SC, GAO Q, FEENSTRA RM

Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

JOURNAL OF ELECTRONIC MATERIALS

HE GW, SRIVASTAVA N, FEENSTRA RM

Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions

APPLIED PHYSICS LETTERS

ROY T, LIU L, DE LA BARRERA S, CHAKRABARTI B, HESABI ZR, JOINER CA, FEENSTRA RM, GU G, VOGEL EM

Energy Gap Induced by Friedel Oscillations Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries

PHYSICAL REVIEW X

CLARK KW, ZHANG XG, GU G, PARK J, HE GW, FEENSTRA RM, LI AP