国家/地区 China（11）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（4） CARBON（3）
出版时间 2012（3） 2013（3） 2014（3） 2011（2）
机构 TSINGHUA UNIV（11）
作者 FENG TT（11）

Back-gate graphene field-effect transistors with double conductance minima

CARBON

FENG TT, XIE D, XU JL, ZHAO HM, LI G, REN TL, ZHU HG

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

CARBON

FENG TT, XIE D, LI G, XU JL, ZHAO HM, REN TL, ZHU HW

Tunable transport characteristics of p-type graphene field-effect transistors by poly (ethylene imine) overlayer

CARBON

FENG TT, XIE D, ZHAO HM, LI G, XU JL, REN TL, ZHU HW

A small-signal generator based on a multi-layer graphene/molybdenum disulfide heterojunction

APPLIED PHYSICS LETTERS

TAN Z, TIAN H, FENG TT, ZHAO LF, XIE D, YANG Y, XIAO L, WANG J, REN TL, XU J

Ambipolar/unipolar conversion in graphene transistors by surface doping

APPLIED PHYSICS LETTERS

FENG TT, XIE D, ZHAO HM, LI G, XU JL, REN TL, ZHU HW

Graphene/semiconductor heterojunction solar cells with modulated antireflection and graphene work function

ENERGY ENVIRONMENTAL SCIENCE

LIN YX, LI XM, XIE D, FENG TT, CHEN Y, SONG R, TIAN H, REN TL, ZHONG ML, WANG KL, ZHU HW

Unipolar to ambipolar conversion in graphene field-effect transistors

APPLIED PHYSICS LETTERS

FENG TT, XIE D, LIN YX, TIAN H, ZHAO HM, REN TL, ZHU HW

Multi-layer graphene treated by O-2 plasma for transparent conductive electrode applications

MATERIALS LETTERS

FENG TT, XIE D, TIAN H, PENG PG, ZHANG D, FU D, REN TL, LI XM, ZHU HW, JING YP

Efficiency enhancement of graphene/silicon-pillar-array solar cells by HNO3 and PEDOT-PSS

NANOSCALE

FENG TT, XIE D, LIN YX, ZHAO HM, CHEN Y, TIAN H, REN TL, LI X, LI Z, WANG KL, WU DH, ZHU HW

Graphene based Schottky junction solar cells on patterned silicon-pillar-array substrate

APPLIED PHYSICS LETTERS

FENG TT, XIE D, LIN YX, ZANG YY, REN TL, SONG R, ZHAO HM, TIAN H, LI X, ZHU HW, LIU LT