国家/地区 Usa（5）
关键词
出版物 JOURNAL OF VACUUM S.（2） PHYSICAL REVIEW LET.（2）
出版时间 2008（5）
机构 GEORGIA INST.（4）
作者 FIRST PN（5）

Interface structure of epitaxial graphene grown on 4H-SiC(0001)

PHYSICAL REVIEW B

HASS J, MILLANOTOYA JE, FIRST PN, CONRAD EH

Ultrafast Relaxation of Excited Dirac Fermions in Epitaxial Graphene Using Optical Differential Transmission Spectroscopy

PHYSICAL REVIEW LETTERS

SUN D, WU ZK, DIVIN C, LI XB, BERGER C, DE HEER WA, FIRST PN, NORRIS TB

Atomic-scale investigation of graphene formation on 6H-SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

GUISINGER NP, RUTTER GM, CRAIN JN, HEILIGER C, FIRST PN, STROSCIO JA

Structural and electronic properties of bilayer epitaxial graphene

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

RUTTER GM, CRAIN JN, GUISINGER NP, FIRST PN, STROSCIO JA

Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene

PHYSICAL REVIEW LETTERS

HASS J, VARCHON F, MILLANOTOYA JE, SPRINKLE M, SHARMA N, DE HEER WA, BERGER C, FIRST PN, MAGAUD L, CONRAD EH