国家/地区 Japan（6）
关键词 TRANSISTOR（2）
出版物
出版时间 2014（2） 2019（2）
机构 TOHOKU UNIV（4）
作者 FUNAKUBO K（6）

Influence of interface dipole layers on the performance of graphene field effect transistors

CARBON

NAGAMURA N, FUKIDOME H, NAGASHIO K, HORIBA K, IDE T, FUNAKUBO K, TASHIMA K, TORIUMI A, SUEMITSU M, HORN K, OSHIMA M

Modulation of Electronic States near Electrodes in Graphene Transistors Observed by Operando Photoelectron Nanospectroscopy

SENSORS MATERIALS

FUKIDOME H, FUNAKUBO K, NAGAMURA N, HORIBA K, TATENO Y, OSHIMA M, SUEMITSU M

Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy

APPLIED PHYSICS EXPRESS

FUKIDOME H, NAGASHIO K, NAGAMURA N, TASHIMA K, FUNAKUBO K, HORIBA K, SUEMITSU M, TORIUMI A, OSHIMA M

Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

APPLIED PHYSICS LETTERS

SOMEYA T, FUKIDOME H, ISHIDA Y, YOSHIDA R, IIMORI T, YUKAWA R, AKIKUBO K, YAMAMOTO S, YAMAMOTO S, YAMAMOTO T, KANAI T, FUNAKUBO K, SUEMITSU M, ITATANI J, KOMORI F, SHIN S, MATSUDA I

Interfacial Charge States in Graphene on SiC Studied by Noncontact Scanning Nonlinear Dielectric Potentiometry

PHYSICAL REVIEW LETTERS

YAMASUE K, FUKIDOME H, FUNAKUBO K, SUEMITSU M, CHO YS

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

NANOMATERIALS

ENDOH N, AKIYAMA S, TASHIMA K, SUWA K, KAMOGAWA T, KOHAMA R, FUNAKUBO K, KONISHI S, MOGI H, KAWAHARA M, KAWAI M, KUBOTA Y, OHKOCHI T, KOTSUGI M, HORIBA K, KUMIGASHIRA H, SUEMITSU M, WATANABE I, FUKIDOME H