国家/地区 Usa（5）
关键词
出版物 JOURNAL OF VACUUM SCIENCE TECHNOLOGY B（5）
出版时间 2012（3）
机构 UNIV NOTRE D.（2）
作者 GASKILL DK（5）

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, ZHAO P, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING H, SEABAUGH A, JENA D

Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

XU P, BARBER SD, SCHOELZ JK, ACKERMAN ML, QI DJ, THIBADO PM, WHEELER VD, NYAKITI LO, MYERSWARD RL, EDDY CR, GASKILL DK

Graphene functionalization and seeding for dielectric deposition and device integration

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

GARCES NY, WHEELER VD, GASKILL DK

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING HL, SEABAUGH A, JENA D

Bilayer graphene by bonding CVD graphene to epitaxial graphene

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

JERNIGAN GG, ANDERSON TJ, ROBINSON JT, CALDWELL JD, CULBERTSON JC, MYERSWARD R, DAVIDSON AL, ANCONA MG, WHEELER VD, NYAKITI LO, FRIEDMAN AL, CAMPBELL PM, GASKILL DK