国家/地区 Italy（12）
关键词 GRAPHENE（5） SIMULATION（4） TRANSISTOR（4）
TERAHERTZ OPERATION（3） CUTOFF FREQUENCY（2） MODELING（2）
QUANTUM TRANSPORT（2）
出版物 IEEE TRANSACTIONS O.（3） SOLIDSTATE ELECTRON.（3） IEEE ELECTRON DEVIC.（2）
JOURNAL OF APPLIED .（2）
出版时间 2013（3） 2014（3） 2009（2） 2015（2）
机构 UNIV BOLOGNA（12）
作者 GNANI E（12）

Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback

SOLIDSTATE ELECTRONICS

GRASSI R, GNUDI A, DI LECCE V, GNANI E, REGGIANI S, BACCARANI G

Semianalytical quantum model for graphene field-effect transistors

JOURNAL OF APPLIED PHYSICS

PUGNAGHI C, GRASSI R, GNUDI A, DI LECCE V, GNANI E, REGGIANI S, BACCARANI G

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

IEEE TRANSACTIONS ON ELECTRON DEVICES

GRASSI R, GNUDI A, DI LECCE V, GNANI E, REGGIANI S, BACCARANI G

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

JOURNAL OF APPLIED PHYSICS

GRASSI R, GNUDI A, IMPERIALE I, GNANI E, REGGIANI S, BACCARANI G

Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs

IEEE TRANSACTIONS ON NANOTECHNOLOGY

GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

An investigation of performance limits of conventional and tunneling graphene-based transistors

JOURNAL OF COMPUTATIONAL ELECTRONICS

GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

SOLIDSTATE ELECTRONICS

GRASSI R, POLI S, GNANI E, GNUDI A, REGGIANI S, BACCARANI G

Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G