国家/地区 Sweden（12）
关键词 GRAPHENE（8） SUBHARMONIC RESISTI.（3） FET（2）
FIELDEFFECT TRANSIS.（2） MICROWAVE FIELDEFFE.（2） WBAND（2）
出版物 IEEE ELECTRON DEVIC.（3） CARBON（2） IEEE MICROWAVE WIRE.（2）
IEEE TRANSACTIONS O.（2） IEEE TRANSACTIONS O.（2） SCIENTIFIC REPORTS（2）
出版时间 2012（5） 2017（3） 2013（2） 2015（2）
机构 CHALMERS UNI.（6） CHALMERS（5）
作者 HABIBPOUR O（15）

W-Band Graphene-Based Six-Port Receiver

IEEE MICROWAVE WIRELESS COMPONENTS LETTERS

HAMED A, HABIBPOUR O, SAEED M, ZIRATH H, NEGRA R

Graphene-Si Schottky IR Detector

IEEE JOURNAL OF QUANTUM ELECTRONICS

AMIRMAZLAGHANI M, RAISSI F, HABIBPOUR O, VUKUSIC J, STAKE J

A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

HABIBPOUR O, VUKUSIC J, STAKE J

Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

ANDERSSON MA, HABIBPOUR O, VUKUSIC J, STAKE J

10 dB small-signal graphene FET amplifier

ELECTRONICS LETTERS

ANDERSSON MA, HABIBPOUR O, VUKUSIC J, STAKE J

A Large Signal Graphene FET Model (vol 59, pg 968, 2012)

IEEE TRANSACTIONS ON ELECTRON DEVICES

HABIBPOUR O, VUKUSIC J, STAKE J

A Large-Signal Graphene FET Model

IEEE TRANSACTIONS ON ELECTRON DEVICES

HABIBPOUR O, VUKUSIC J, STAKE J

A Subharmonic Graphene FET Mixer

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, YHLAND K, STAKE J

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, STAKE J

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

SCIENTIFIC REPORTS

GUERRIERO E, PEDRINAZZI P, MANSOURI A, HABIBPOUR O, WINTERS M, RORSMAN N, BEHNAM A, CARRION EA, PESQUERA A, CENTENO A, ZURUTUZA A, POP E, ZIRATH H, SORDAN R