国家/地区 Germany（3）
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出版物
出版时间
机构 PAUL DRUDE INST FESTKORPERELEKT（3）
作者 HANKE M（3）

Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

PHYSICAL REVIEW B

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, LOPES JMJ, RIECHERT H

Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy

NEW JOURNAL OF PHYSICS

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, FROMM F, SEYLLER T, NEMEC L, BLUM V, SCHEFFLER M, LOPES JMJ, RIECHERT H

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

SCHUMANN T, LOPES JMJ, WOFFORD JM, OLIVEIRA MH, DUBSLAFF M, HANKE M, JAHN U, GEELHAAR L, RIECHERT H