国家/地区 France（7）
关键词 TRANSISTOR（8）
出版物 IEEE TRANSACTIONS O.（4）
出版时间 2012（3） 2020（2）
机构 UNIV BORDEAU.（4）
作者 HAPPY H（8）

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

PACHECOSANCHEZ A, MAVREDAKIS N, FEIJOO PC, WEI W, PALLECCHI E, HAPPY H, JIMENEZ D

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

DENG M, FADIL D, WEI W, PALLECCHI E, HAPPY H, DAMBRINE G, DE MATOS M, ZIMMER T, FREGONESE S

Scalable Electrical Compact Modeling for Graphene FET Transistors

IEEE TRANSACTIONS ON NANOTECHNOLOGY

FREGONESE S, MAGALLO M, MANEUX C, HAPPY H, ZIMMER T

Electrical compact modelling of graphene transistors

SOLIDSTATE ELECTRONICS

FREGONESE S, MENG N, NGUYEN HN, MAJEK C, MANEUX C, HAPPY H, ZIMMER T

Flexible Gigahertz Transistors Derived from Solution-Based Single-Layer Graphene

NANO LETTERS

SIRE C, ARDIACA F, LEPILLIET S, SEO JWT, HERSAM MC, DARNBRINE G, HAPPY H, DERYCKE V

Characterization and Modeling of Graphene Transistor Low-Frequency Noise

IEEE TRANSACTIONS ON ELECTRON DEVICES

GRANDCHAMP B, FREGONESE S, MAJEK C, HAINAUT C, MANEUX C, MENG N, HAPPY H, ZIMMER T

Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

MENG N, FERNANDEZ JF, VIGNAUD D, DAMBRINE G, HAPPY H

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

WEI W, ZHOU X, DEOKAR G, KIM H, BELHAJ MM, GALOPIN E, PALLECCHI E, VIGNAUD D, HAPPY H