国家/地区 China（5）
关键词 FIELDEFFECT TRANSISTOR（5）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间 2017（2） 2021（2）
机构 HEBEI SEMICO.（2）
作者 HE ZZ（5）

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

Heterodyne detection at 216, 432, and 648 GHz based on bilayer graphene field-effect transistor with quasi-optical coupling

CARBON

QIN H, SUN JD, HE ZZ, LI XX, LI X, LIANG SX, YU C, FENG ZH, TU XC, JIN BB, CHEN J, WU PH

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

CHINESE PHYSICS B

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, LI J, LU WL, FENG ZH, CAI SJ

Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

ACS APPLIED NANO MATERIALS

GAO XD, YU C, HE ZZ, GUO JC, LIU QB, ZHOU CJ, CAI SJ, FENG ZH

Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, GAO XD, LIU QB, ZHANG YH, YU GH, HAN TT, LIU C, FENG ZH, CAI SJ