国家/地区 Taiwan（8）
关键词 GRAPHENE（3） LANDAU LEVEL（3） WAVE FUNCTION（3）
TIGHTBINDING MODEL（2）
出版物 PHYSICAL REVIEW B（2）
出版时间 2011（2） 2016（2） 2018（2）
机构 NATL CHENG K.（6）
作者 HO CH（10）

Unusual electronic excitations in ABA trilayer graphene

SCIENTIFIC REPORTS

LIN CY, HO CH, WU JY, LIN MF

Geometry-diversified Coulomb excitations in trilayer AAB stacking graphene

PHYSICAL REVIEW B

LIN CY, HUANG BL, HO CH, GUMBS G, LIN MF

A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

WANG H, YAN XB, JIA XL, ZHANG ZC, HO CH, LU C, ZHANG YY, YANG T, ZHAO JH, ZHOU ZY, ZHAO ML, REN DL

Modulation Effects of Periodic Potentials on the Electronic Properties of Bilayer Bernal Graphene: Tight-Binding Model

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

TSAI SJ, SHEU JK, HO CH, CHIU YH, LIN MF

Low-Energy Landau Level Spectrum in ABC-Stacked Trilayer Graphene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

HO CH, TSAI SJ, CHEN RB, CHIU YH, LIN MF

Magneto-electronic properties of rhombohedral trilayer graphene: Peierls tight-binding model

ANNALS OF PHYSICS

HO CH, HO YH, CHIU YH, CHEN YN, LIN MF

Landau levels in a simple hexagonal bilayer graphene

PHYSICS LETTERS A

LAI YH, CHANG CP, HO JH, HO CH, LIN MF

Magnetoelectronic and optical properties of nonuniform graphene nanoribbons

CARBON

CHUNG HC, LIN YT, LIN SY, HO CH, CHANG CP, LIN MF

Evolution and dimensional crossover from the bulk subbands in ABC-stacked graphene to a three-dimensional Dirac cone structure in rhombohedral graphite

PHYSICAL REVIEW B

HO CH, CHANG CP, LIN MF

An all two-dimensional vertical heterostructure graphene/CuInP2S6/MoS2 for negative capacitance field effect transistor

NANOTECHNOLOGY

LIAQAT A, YIN YH, HUSSAIN S, WEN W, WU JX, GUO YZ, DANG CH, HO CH, LIU Z, YU P, CHENG ZH, XIE LM