国家/地区 Japan（7）
关键词 TRANSISTOR（2）
出版物
出版时间 2014（2） 2019（2） 2021（2）
机构 TOHOKU UNIV（5）
作者 HORIBA K（7）

Influence of interface dipole layers on the performance of graphene field effect transistors

CARBON

NAGAMURA N, FUKIDOME H, NAGASHIO K, HORIBA K, IDE T, FUNAKUBO K, TASHIMA K, TORIUMI A, SUEMITSU M, HORN K, OSHIMA M

Modulation of Electronic States near Electrodes in Graphene Transistors Observed by Operando Photoelectron Nanospectroscopy

SENSORS MATERIALS

FUKIDOME H, FUNAKUBO K, NAGAMURA N, HORIBA K, TATENO Y, OSHIMA M, SUEMITSU M

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication

SCIENTIFIC REPORTS

FUKIDOME H, IDE T, KAWAI Y, SHINOHARA T, NAGAMURA N, HORIBA K, KOTSUGI M, OHKOCHI T, KINOSHITA T, KUMIGHASHIRA H, OSHIMA M, SUEMITSU M

Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy

APPLIED PHYSICS EXPRESS

FUKIDOME H, NAGASHIO K, NAGAMURA N, TASHIMA K, FUNAKUBO K, HORIBA K, SUEMITSU M, TORIUMI A, OSHIMA M

Direct observation of charge transfer region at interfaces in graphene devices

APPLIED PHYSICS LETTERS

NAGAMURA N, HORIBA K, TOYODA S, KUROSUMI S, SHINOHARA T, OSHIMA M, FUKIDOME H, SUEMITSU M, NAGASHIO K, TORIUMI A

Electronic structure of 3 degrees-twisted bilayer graphene on 4H-SiC(0001)

PHYSICAL REVIEW MATERIALS

IIMORI T, VISIKOVSKIY A, IMAMURA H, MIYAMACHI T, KITAMURA M, HORIBA K, KUMIGASHIRA H, MASE K, NAKATSUJI K, TANAKA S, KOMORI F

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

NANOMATERIALS

ENDOH N, AKIYAMA S, TASHIMA K, SUWA K, KAMOGAWA T, KOHAMA R, FUNAKUBO K, KONISHI S, MOGI H, KAWAHARA M, KAWAI M, KUBOTA Y, OHKOCHI T, KOTSUGI M, HORIBA K, KUMIGASHIRA H, SUEMITSU M, WATANABE I, FUKIDOME H