国家/地区 China（4）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2020（2）
机构 CHINESE ACAD SCI（4）
作者 JIA YP（4）

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020)

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Identification of dominant scattering mechanism in epitaxial graphene on

APPLIED PHYSICS LETTERS

LIN JJ, GUO LW, JIA YP, YANG R, WU S, HUANG J, GUO Y, LI ZL, ZHANG GY, CHEN XL

Graphene covered SiC powder as advanced photocatalytic material

APPLIED PHYSICS LETTERS

ZHU KX, GUO LW, LIN JJ, HAO WC, SHANG J, JIA YP, CHEN LL, JIN SF, WANG WJ, CHEN XL