国家/地区 Korea（6）
关键词 GRAPHENE（8）
出版物 SCIENCE TECHNOLOGY .（2）
出版时间 2014（2） 2018（2） 2021（2）
机构 SEJONG UNIV（3）
作者 KHAN MF（8）

Gate-Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures

ADVANCED ENGINEERING MATERIALS

IQBAL MZ, SIDDIQUE S, KHAN MF, REHMAN AU, REHMAN A, EOM J

Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors

NANOMATERIALS

NAZIR G, KHAN MF, AFTAB S, AFZAL AM, DASTGEER G, REHMAN MA, SEO Y, EOM J

Modification of the structural and electrical properties of graphene layers by Pt adsorbates

SCIENCE TECHNOLOGY OF ADVANCED MATERIALS

IQBAL MW, IQBAL MZ, KHAN MF, JIN X, HWANG C, EOM J

Improving the electrical properties of graphene layers by chemical doping

SCIENCE TECHNOLOGY OF ADVANCED MATERIALS

KHAN MF, IQBAL MZ, IQBAL MW, EOM J

Power Spectrum of Dual Varieties of Graphene Allotropes

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

ABDULLAH MM, NIZAM R, ALBARGI HB, AHMAD MZ, AHMAD J, KHAN MF, MUSTAFA J

Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors

ELECTRONICS

AFZAL AM, KHAN MF, EOM J

Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

JOURNAL OF ALLOYS COMPOUNDS

REHMAN S, KIM H, KHAN MF, HUR JH, EOM J, KIM DK

Enhanced and Passivated Co-doping Effect of Organic Molecule and Bromine on Graphene/HfO2/Silicon Metal-Insulator-Semiconductor (MIS) Schottky Junction Solar Cells

ACS APPLIED ENERGY MATERIALS

KADAM KD, REHMAN MA, KIM H, REHMAN S, KHAN MA, PATIL H, AZIZ J, PARK S, BASIT MA, KHAN K, TAREEN AK, KHAN MF, KIM DK