国家/地区 Russia（5）
关键词 GRAPHENE（4）
出版物 JETP LETTERS（3） SEMICONDUCTORS（2）
出版时间 2019（2）
机构 RUSSIAN ACAD.（5）
作者 KHANIN YN（7）

On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures

SEMICONDUCTORS

GRIGORIEV MV, GHAZARYAN DA, VDOVIN EE, KHANIN YN, MOROZOV SV, NOVOSELOV KS

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures

SEMICONDUCTORS

KHANIN YN, VDOVIN EE, MISHCHENKO A, NOVOSELOV KS

Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene

JETP LETTERS

KHANIN YN, VDOVIN EE, GRIGOR EV MV, MAKAROVSKY O, ALHAZMI M, MOROZOV SV, MISHCHENKO A, NOVOSELOV KS

Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures

JETP LETTERS

KHANIN YN, VDOVIN EE, LARKIN IA, MAKAROVSKY O, SKLYUEVA YA, MISHCHENKO A, WANG YB, KOZIKOV A, GORBACHEV RV, NOVOSELOV KS

Selective Spectroscopy of Tunneling Transitions between the Landau Levels in Vertical Double-Gate Graphene-Boron Nitride-Graphene Heterostructures

JETP LETTERS

KHANIN YN, VDOVIN EE, MISHCHENKO A, TU JS, KOZIKOV A, GORBACHEV RV, NOVOSELOV KS

ENHANCEMENT OF REDUCED GRAPHENE OXIDE BOLOMETRIC PHOTORESPONSE VIA ADDITION OF GRAPHENE QUANTUM DOTS

SURFACE REVIEW LETTERS

LAI S, CHEN M, KHANIN YN, NOVOSELOV KS, ANDREEVA DV

Graphene FETs with high and low mobilities have universal temperature-dependent properties

NANOTECHNOLOGY

GOSLING JH, MOROZOV SV, VDOVIN EE, GREENAWAY MT, KHANIN YN, KUDRYNSKYI Z, PATANE A, EAVES L, TURYANSKA L, FROMHOLD TM, MAKAROVSKY O