国家/地区 Korea（4）
关键词 FIELDEFFECT TRANSISTOR（4）
出版物
出版时间
机构
作者 KIM H（4）

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

ADVANCED MATERIALS

CHEE SS, SEO D, KIM H, JANG H, LEE S, MOON SP, LEE KH, KIM SW, CHOI H, HAM MH

Controllable Bipolar Doping of Graphene with 2D Molecular Dopants

SMALL

KANG B, KIM H, HAN JT, KIM DG, CHO K

Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors

IEICE TRANSACTIONS ON ELECTRONICS

HWANG J, KIM H, LEE J, WHANG D, HWANG S

Facile fabrication for a stable interface in 2D materials/graphene van der Waals heterostructure

APPLIED PHYSICS EXPRESS

DU H, KIM S, KIM T, SHIN S, SONG HK, KIM H, KANG D, WOO YS, SEO S