国家/地区 Korea（5） Usa（2）
关键词 GRAPHENE（7）
出版物 NANO LETTERS（2） NANOTECHNOLOGY（2）
出版时间 2017（7）
机构 UNIV TEXAS A.（2）
作者 KIM K（7）

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

NANOTECHNOLOGY

SUL O, KIM K, JUNG Y, CHOI E, LEE SB

Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer

2D MATERIALS

SEO HK, KIM K, MIN SY, LEE Y, PARK CE, RAJ R, LEE TW

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

NANO LETTERS

BURG GW, PRASAD N, FALLAHAZAD B, VALSARAJ A, KIM K, TANIGUCHI T, WATANABE K, WANG QX, KIM MJ, REGISTER LF, TUTUC E

Observation of variable hybridized-band gaps in Eu-intercalated graphene

NANOTECHNOLOGY

SUNG S, KIM S, LEE P, KIM J, RYU M, PARK H, KIM K, MIN BI, CHUNG J

Enhancement of Interface Characteristics of Neural Probe Based on Graphene, ZnO Nanowires, and Conducting Polymer PEDOT

ACS APPLIED MATERIALS INTERFACES

RYU M, YANG JH, AHN Y, SIM M, LEE KH, KIM K, LEE T, YOO SJ, KIM SY, MOON C, JE M, CHOI JW, LEE Y, JANG JE

Tunable moire bands and strong correlations in small-twist-angle bilayer graphene

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

KIM K, DASILVA A, HUANG S, FALLAHAZAD B, LARENTIS S, TANIGUCHI T, WATANABE K, LEROY BJ, MACDONALD AH, TUTUC E

Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer

NANO LETTERS

YOON HH, JUNG S, CHOI G, KIM J, JEON Y, KIM YS, JEONG HY, KIM K, KWON SY, PARK K