国家/地区 Korea（11）
关键词 GRAPHENE BARRISTOR（3） GRAPHENE（2） HETEROSTRUCTURE（2）
PHOTODETECTOR（2）
出版物 ADVANCED ELECTRONIC.（2） JAPANESE JOURNAL OF.（2） SCIENTIFIC REPORTS（2）
出版时间 2018（4） 2019（4） 2017（2）
机构 GWANGJU INST SCI TECHNOL（11）
作者 KIM SY（11）

Threshold Voltage Modulation of a Graphene-ZnO Barristor Using a Polymer Doping Process

ADVANCED ELECTRONIC MATERIALS

KIM SY, HWANG J, KIM YJ, HWANG HJ, SON M, REVANNATH N, HAM MH, CHO K, LEE BH

High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction

ADVANCED ELECTRONIC MATERIALS

CHANG KE, KIM C, YOO TJ, KWON MG, HEO S, KIM SY, HYUN Y, YOO JI, KO HC, LEE BH

Piezoelectrically modulated touch pressure sensor using a graphene barristor

JAPANESE JOURNAL OF APPLIED PHYSICS

HWANG HJ, KIM SY, KANG SC, ALLOUCHE B, YANG JH, LEE BH

Chemically doped graphene based ternary field effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

KIM SY, KIM MB, HWANG HJ, ALLOUCHE B, LEE BH

Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors

IEEE ELECTRON DEVICE LETTERS

HEO S, KIM S, KIM K, LEE H, KIM SY, KIM YJ, KIM SM, LEE HI, LEE S, KIM KR, KANG S, LEE BH

Very-Low-Temperature Integrated Complementary Graphene-Barristor-Based Inverter for Thin-Film Transistor Applications

ANNALEN DER PHYSIK

HEO S, LEE HI, LEE H, KIM SM, KIM K, KIM YJ, KIM SY, KIM JH, YOON MH, LEE BH

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

SMALL

CHANG KE, YOO TJ, KIM C, KIM YJ, LEE SK, KIM SY, HEO S, KWON MG, LEE BH

Chemically induced Fermi level pinning effects of high-k dielectrics on graphene

SCIENTIFIC REPORTS

KIM SY, KIM YJ, JUNG U, LEE BH

High Volumetric Energy Density Hybrid Supercapacitors Based on Reduced Graphene Oxide Scrolls

ACS APPLIED MATERIALS INTERFACES

RANI JR, THANGAVEL R, OH SI, WOO JM, DAS NC, KIM SY, LEE YS, JANG JH

A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

NANOSCALE

HWANG HJ, CHANG KE, YOO WB, SHIM CH, LEE SK, YANG JH, KIM SY, LEE Y, CHO C, LEE BH