国家/地区 India（7）
关键词
出版物 PHYSICAL REVIEW B（3）
出版时间 2009（2） 2017（2）
机构 INDIAN INST .（5）
作者 KRISHNAMURTHY HR（7）

Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene

ADVANCED MATERIALS

PANCHOKARLA LS, SUBRAHMANYAM KS, SAHA SK, GOVINDARAJ A, KRISHNAMURTHY HR, WAGHMARE UV, RAO CNR

Mechanisms of molecular doping of graphene: A first-principles study

PHYSICAL REVIEW B

SAHA SK, CHANDRAKANTH RC, KRISHNAMURTHY HR, WAGHMARE UV

Phonons in few-layer graphene and interplanar interaction: A first-principles study

PHYSICAL REVIEW B

SAHA SK, WAGHMARE UV, KRISHNAMURTHY HR, SOOD AK

Probing zone-boundary optical phonons in doped graphene

PHYSICAL REVIEW B

SAHA SK, WAGHMARE UV, KRISHNAMURTHY HR, SOOD AK

Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene

NANO LETTERS

MAHAPATRA PS, SARKAR K, KRISHNAMURTHY HR, MUKERJEE S, GHOSH A

Quantized edge modes in atomic-scale point contacts in graphene

NATURE NANOTECHNOLOGY

KINIKAR A, SAI TP, BHATTACHARYYA S, AGARWALA A, BISWAS T, SARKER SK, KRISHNAMURTHY HR, JAIN M, SHENOY VB, GHOSH A

Breakdown of semiclassical description of thermoelectricity in near-magic angle twisted bilayer graphene

NATURE COMMUNICATIONS

GHAWRI B, MAHAPATRA PS, GARG M, MANDAL S, BHOWMIK S, JAYARAMAN A, SONI R, WATANABE K, TANIGUCHI T, KRISHNAMURTHY HR, JAIN M, BANERJEE S, CHANDNI U, GHOSH A