国家/地区 Korea（5）
关键词 NONVOLATILE MEMORY（6）
出版物 JOURNAL OF THE KORE.（2）
出版时间 2012（2） 2017（2）
机构 KYUNG HEE UN.（2）
作者 LEE S（6）

Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells

ACS APPLIED MATERIALS INTERFACES

SEO S, LIM J, LEE S, ALIMKHANULY B, KADYROV A, JEON D, LEE S

Transparent and Flexible Graphene Charge-Trap Memory

ACS NANO

KIM SM, SONG EB, LEE S, ZHU JF, SEO DH, MECKLENBURG M, SEO S, WANG KL

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films

NANOTECHNOLOGY

LEE K, PARK JW, TCHOE Y, YOON J, CHUNG K, YOON H, LEE S, YOON C, PARK BH, YI GC

Different working mechanisms for a graphene resistive memory based on oxygen-ion transport

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S

Resistive switching characteristics of ZnO-graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

ORGANIC ELECTRONICS

JI Y, LEE SA, CHA AN, GOH M, BAE S, LEE S, SON DI, KIM TW