国家/地区 Sweden（4） Germany（2）
关键词 GRAPHENE（4） RF（2） STATISTIC（2）
WAFERSCALE FABRICAT.（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（7）
出版时间 2014（2） 2017（2） 2018（2）
机构 KTH ROYAL IN.（4）
作者 LEMME MC（7）

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

PANDEY H, SHAYGAN M, SAWALLICH S, KATARIA S, ZHENXING W, NOCULAK A, OTTO M, NAGEL M, NEGRA R, NEUMAIER D, LEMME MC

On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, GAHOI A, PALESTRI P, LEMME MC, SELMI L

Static Nonlinearity in Graphene Field Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

RODRIGUEZ S, SMITH A, VAZIRI S, OSTLING M, LEMME MC, RUSU A

A Comprehensive Graphene FET Model for Circuit Design

IEEE TRANSACTIONS ON ELECTRON DEVICES

RODRIGUEZ S, VAZIRI S, SMITH A, FREGONESE S, OSTLING M, LEMME MC, RUSU A

Wafer-Scale Statistical Analysis of Graphene FETs-Part I: Wafer-Scale Fabrication and Yield Analysis

IEEE TRANSACTIONS ON ELECTRON DEVICES

SMITH AD, WAGNER S, KATARIA S, MALM BG, LEMME MC, OSTLING M

Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors-Part II: Analysis of Device Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES

SMITH AD, WAGNER S, KATARIA S, MALM BG, LEMME MC, OSTLING M

Author's Reply to "Comments on 'Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration' " S. Fregonese and T. Zimmer

IEEE TRANSACTIONS ON ELECTRON DEVICES

IANNAZZO M, LEMME MC, ALARCON E