国家/地区 Korea（5）
关键词 DOPING MODULATION（2） PHOTOEMISSION SPECT.（2） QUASIFREESTANDING G.（2）
SCANNING TUNNELING .（2） SIC 0001（2）
出版物 CARBON（3）
出版时间 2016（2）
机构 CHONBUK NATL.（4）
作者 LKHAGVASUREN A（5）

Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

CARBON

KIM H, TSOGTBAATAR N, TUVDENDORJ B, LKHAGVASUREN A, SEO JM

Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-xGex intercalation

CARBON

KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM

Origin of ambipolar graphene doping induced by the ordered Ge film intercalated on SiC(0001)

CARBON

KIM HD, DUGERJAV O, LKHAGVASUREN A, SEO JM

Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM

SiGe-intercalated graphene on SiC(0001): Interfacial structures and graphene doping depending on coverage and composition ratio of the alloy

APPLIED SURFACE SCIENCE

TUVDENDORJ B, TSOGTBAATAR N, LKHAGVASUREN A, SEO JM, KIM MW, KIM H