国家/地区 China（2）
关键词
出版物
出版时间
机构 FUDAN UNIV（3）
作者 LU HL（3）

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold-ZrO2 Nanofilms

ADVANCED ELECTRONIC MATERIALS

PANG QQ, CHEN HL, WANG XY, WANG T, WANG DY, FENG SG, LU HL, LI QW

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

APPLIED PHYSICS LETTERS

WANG LH, YANG W, SUN QQ, ZHOU P, LU HL, DING SJ, ZHANG DW

Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

JOURNAL OF NANOMATERIALS

LIU WJ, CHEN L, ZHOU P, SUN QQ, LU HL, DING SJ, ZHANG DW