国家/地区 Usa（9）
关键词 FIELDEFFECT TRANSIS.（2）
出版物 PHYSICAL REVIEW B（2）
出版时间 2010（4） 2009（3） 2012（2）
机构 CARNEGIE MEL.（6）
作者 LUXMI（9）

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG

Interface structure of graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

SRIVASTAVA N, HE GW, LUXMI, FEENSTRA RM

Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

PHYSICAL REVIEW B

LUXMI, SRIVASTAVA N, HE G, FEENSTRA RM, FISHER PJ

Thickness monitoring of graphene on SiC using low-energy electron diffraction

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

FISHER PJ, LUXMI, SRIVASTAVA N, NIE S, FEENSTRA RM

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LUXMI, SRIVASTAVA N, FEENSTRA RM, FISHER PJ

Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene

NANO LETTERS

HUANG LB, HARTLAND GV, CHU LQ, LUXMI, FEENSTRA RM, LIAN CX, TAHY K, XING HL

The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics

SOLID STATE COMMUNICATIONS

GU G, LUXMI, FISHER PJ, SRIVASTAVA N, FEENSTRA RM

Morphology of graphene on SiC(000(1)over-bar) surfaces

APPLIED PHYSICS LETTERS

LUXMI, FISHER PJ, SRIVASTAVA N, FEENSTRA RM, SUN YG, KEDZIERSKI J, HEALEY P, GU G

Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

JOURNAL OF ELECTRONIC MATERIALS

LUXMI, NIE S, FISHER PJ, FEENSTRA RM, GU G, SUN YG