国家/地区 Malaysia（6）
关键词 GRAPHENE NANORIBBON（2）
出版物 MICROELECTRONICS RE.（4） JOURNAL OF COMPUTAT.（2）
出版时间 2012（3） 2014（2）
机构 UNIV SAINS M.（6）
作者 NADI M（7）

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors (vol 53, pg 540, 2013)

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORAN M, MANAF AABD, KARIMI H, SADEGHI H

An Analytical Approach to Study Breakdown Mechanism in Graphene Nanoribbon Field Effect Transistors

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

GHADIRY M, NADI M, SAIEDMANESH M, ABADI HKF

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORIAN M, MANAF AABD, KARIMI H, SADEGHI H

Theory of Ionization Mechanism in Graphene Nanoribbons

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

GHADIRY M, BIN ABD MANAF A, NADI M, RAHMANI M, AHMADI MT

Ionization coefficient of monolayer graphene nanoribbon

MICROELECTRONICS RELIABILITY

GHADIRY M, BIN ABD MANAF A, NADI M, RAHMANI M, AHMADI MT

Modelling and Simulation of Saturation Region in Double Gate Graphene Nanoribbon Transistors

SEMICONDUCTORS

GHADIRY MH, NADI M, RAHMANI M, AHMADI MT, BIN ABD MANAF A

A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors

MICROELECTRONICS RELIABILITY

GHADIRY MH, NADI M, AHMADI MT, ABD MANAF A