国家/地区 Japan（3）
关键词
出版物 JAPANESE JOURNAL OF.（3）
出版时间 2016（3）
机构 UNIV TOKUSHIMA（3）
作者 NAGASE M（3）

Epitaxial graphene on SiC formed by the surface structure control technique

JAPANESE JOURNAL OF APPLIED PHYSICS

ARITSUKI T, NAKASHIMA T, KOBAYASHI K, OHNO Y, NAGASE M

Microscopic Raman study of graphene on 4H-SiC two-dimensionally enhanced by surface roughness and gold nanoparticles

JAPANESE JOURNAL OF APPLIED PHYSICS

MATSUMURA H, YANAGIYA S, NAGASE M, KISHIKAWA H, GOTO N

Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

OHNO Y, KANAI Y, MORI Y, NAGASE M, MATSUMOTO K