国家/地区 Japan（8）
关键词 CONTACT RESISTANCE（2） FET（2） GRAPHENE（2）
SILICON（2）
出版物 JAPANESE JOURNAL OF.（3） JOURNAL OF APPLIED .（2） SOLIDSTATE ELECTRON.（2）
出版时间 2010（8）
机构 TOHOKU UNIV（5） UNIV AIZU（3）
作者 OTSUJI T（8）

Epitaxial graphene top-gate FETs on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial graphene field-effect transistors on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, SUEMITSU M, OTSUJI T

Electrically induced n-i-p junctions in multiple graphene layer structures

PHYSICAL REVIEW B

RYZHII M, RYZHII V, OTSUJI T, MITIN V, SHUR MS

Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, OTSUJI T

Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides

JOURNAL OF APPLIED PHYSICS

RYZHII V, DUBINOV AA, OTSUJI T, MITIN V, SHUR MS

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010)

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

JAPANESE JOURNAL OF APPLIED PHYSICS

OLACVAW R, KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T