国家/地区 Japan（6） Russia（3）
关键词 GRAPHENE（3） TERAHERTZ RADIATION（2）
出版物 JAPANESE JOURNAL OF.（2） PHYSICAL REVIEW B（2）
出版时间 2016（9）
机构 TOHOKU UNIV（7）
作者 OTSUJI T（9）

Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure

OPTICS EXPRESS

DUBINOV AA, BYLINKIN A, ALESHKIN VY, RYZHII V, OTSUJI T, SVINTSOV D

Terahertz wave generation and detection in double-graphene layered van der Waals heterostructures

2D MATERIALS

YADAV D, TOMBET SB, WATANABE T, ARNOLD S, RYZHII V, OTSUJI T

Plasmons in tunnel-coupled graphene layers: Backward waves with quantum cascade gain

PHYSICAL REVIEW B

SVINTSOV D, DEVIZOROVA Z, OTSUJI T, RYZHII V

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RYZHII V, RYZHII M, SHUR MS, MITIN V, SATOU A, OTSUJI T

A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

IEEE TRANSACTIONS ON ELECTRON DEVICES

SATOU A, TAMAMUSHI G, SUGAWARA K, MITSUSHIO J, RYZHII V, OTSUJI T

Giant plasmon instability in a dual-grating-gate graphene field-effect transistor

PHYSICAL REVIEW B

KOSEKI Y, RYZHII V, OTSUJI T, POPOV VV, SATOU A

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

JOURNAL OF LIGHTWAVE TECHNOLOGY

SUGAWARA K, KAWASAKI T, TAMAMUSHI G, MASTURA H, DOBROIU A, YOSHIDA T, SUEMITSU T, FUKIDOME H, SUEMITSU M, RYZHII V, IWATSUKI K, KUWANO S, KANI JI, TERADA J, OTSUJI T