国家/地区 Japan（5）
关键词
出版物 JAPANESE JOURNAL OF.（3）
出版时间 2016（2）
机构 TOHOKU UNIV（5）
作者 PARK GH（5）

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

CARBON

KIM KS, PARK GH, FUKIDOME H, TAKASHI S, TAKUSHI I, FUMIO K, IWAO M, SUEMITSU M

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

PROCEEDINGS OF THE IEEE

JUNG MH, PARK GH, YOSHIDA T, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing

JAPANESE JOURNAL OF APPLIED PHYSICS

KIM KS, PARK GH, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M