国家/地区 Usa（7）
关键词
出版物 APPLIED PHYSICS LETTERS（7）
出版时间 2011（3） 2012（2）
机构 UNIV TEXAS AUSTIN（7）
作者 PARRISH KN（7）

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

APPLIED PHYSICS LETTERS

RAMON ME, MOVVA HCP, CHOWDHURY SF, PARRISH KN, RAI A, MAGNUSON CW, RUOFF RS, AKINWANDE D, BANERJEE SK

"Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers" (vol 99, 223512, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Multi-finger flexible graphene field effect transistors with high bendability

APPLIED PHYSICS LETTERS

LEE J, TAO L, PARRISH KN, HAO YF, RUOFF RS, AKINWANDE D

An exactly solvable model for the graphene transistor in the quantum capacitance limit

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Impact of contact resistance on the transconductance and linearity of graphene transistors (vol 98, 183505, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Impact of contact resistance on the transconductance and linearity of graphene transistors

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D