国家/地区 Germany（9）
关键词 GRAPHENE（4） THREE TERMINAL JUNC.（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2012（2） 2020（2）
机构 TECH UNIV IL.（6） TU ILMENAU（2）
作者 PEZOLDT J（9）

Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

CARBON

HAHNLEIN B, LEBEDEV SP, ELISEYEV IA, SMIRNOV AN, DAVYDOV VY, ZUBOV AV, LEBEDEV AA, PEZOLDT J

Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001)

SURFACE SCIENCE

OMIDIAN M, NEEL N, MANSKE E, PEZOLDT J, LEI Y, KROGER J

Electrical gating and rectification in graphene three-terminal junctions

APPLIED SURFACE SCIENCE

HANDEL B, HAHNLEIN B, GOCKERITZ R, SCHWIERZ F, PEZOLDT J

Side-gate graphene field-effect transistors with high transconductance

APPLIED PHYSICS LETTERS

HAHNLEIN B, HANDEL B, PEZOLDT J, TOPFER H, GRANZNER R, SCHWIERZ F

Graphene field effect transistor improvement by graphene-silicon dioxide interface modification

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

PEZOLDT J, HUMMEL C, SCHWIERZ F

Epitaxial graphene three-terminal junctions

APPLIED PHYSICS LETTERS

GOCKERITZ R, PEZOLDT J, SCHWIERZ F

Ambient and temperature dependent electric properties of backgate graphene transistors

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

HUMMEL C, SCHWIERZ F, HANISCH A, PEZOLDT J

Graphene Nanoribbons for Electronic Devices

ANNALEN DER PHYSIK

GENG ZS, HAHNLEIN B, GRANZNER R, AUGE M, LEBEDEV AA, DAVYDOV VY, KITTLER M, PEZOLDT J, SCHWIERZ F

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

ELECTRONICS

BONDJA CN, GENG ZS, GRANZNER R, PEZOLDT J, SCHWIERZ F