国家/地区 Germany（14） Brazil（4）
关键词 MOLECULAR BEAM EPIT.（3）
出版物 CARBON（4） APPLIED PHYSICS LET.（3） NEW JOURNAL OF PHYS.（3）
PHYSICAL REVIEW B（3）
出版时间 2013（5） 2014（3） 2012（2） 2015（2） 2016（2） 2017（2） 2018（2）
机构 PAUL DRUDE I.（11） UNIV FED RIO.（3）
作者 RIECHERT H（19）

Growth of boron-doped few-layer graphene by molecular beam epitaxy

APPLIED PHYSICS LETTERS

SOARES GV, NAKHAIE S, HEILMANN M, RIECHERT H, LOPES JMJ

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

2D MATERIALS

HEILMANN M, BASHOUTI M, RIECHERT H, LOPES JMJ

Synergistic effect of H2O and O-2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments

CARBON

BOM NM, OLIVEIRA MH, SOARES GV, RADTKE C, LOPES JMJ, RIECHERT H

Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions

NEW JOURNAL OF PHYSICS

WOFFORD JM, OLIVEIRA MH, SCHUMANN T, JENICHEN B, RAMSTEINER M, JAHN U, FOLSCH S, LOPES JMJ, RIECHERT H

Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

PHYSICAL REVIEW B

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, LOPES JMJ, RIECHERT H

Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy

NEW JOURNAL OF PHYSICS

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, FROMM F, SEYLLER T, NEMEC L, BLUM V, SCHEFFLER M, LOPES JMJ, RIECHERT H

Acousto-electric transport in epitaxial monolayer graphene on SiC

APPLIED PHYSICS LETTERS

SANTOS PV, SCHUMANN T, OLIVEIRA MH, LOPES JMJ, RIECHERT H

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

CARBON

OLIVEIRA MH, SCHUMANN T, GARGALLOCABALLERO R, FROMM F, SEYLLER T, RAMSTEINER M, TRAMPERT A, GEELHAAR L, LOPES JMJ, RIECHERT H

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

NEW JOURNAL OF PHYSICS

FROMM F, OLIVEIRA MH, MOLINASANCHEZ A, HUNDHAUSEN M, LOPES JMJ, RIECHERT H, WIRTZ L, SEYLLER T

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

CARBON

OLIVEIRA MH, SCHUMANN T, FROMM F, KOCH R, OSTLER M, RAMSTEINER M, SEYLLER T, LOPES JMJ, RIECHERT H