国家/地区 Germany（10） Usa（2）
关键词 MOLECULAR BEAM EPIT.（2）
出版物 APPLIED PHYSICS LET.（3） CARBON（3） PHYSICAL REVIEW B（3）
NEW JOURNAL OF PHYS.（2）
出版时间 2013（4） 2011（3） 2012（2） 2014（2） 2015（2）
机构 PAUL DRUDE I.（10） UNIV FLORIDA（2）
作者 SCHUMANN T（14）

Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions

NEW JOURNAL OF PHYSICS

WOFFORD JM, OLIVEIRA MH, SCHUMANN T, JENICHEN B, RAMSTEINER M, JAHN U, FOLSCH S, LOPES JMJ, RIECHERT H

Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

PHYSICAL REVIEW B

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, LOPES JMJ, RIECHERT H

Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy

NEW JOURNAL OF PHYSICS

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, FROMM F, SEYLLER T, NEMEC L, BLUM V, SCHEFFLER M, LOPES JMJ, RIECHERT H

Acousto-electric transport in epitaxial monolayer graphene on SiC

APPLIED PHYSICS LETTERS

SANTOS PV, SCHUMANN T, OLIVEIRA MH, LOPES JMJ, RIECHERT H

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

CARBON

OLIVEIRA MH, SCHUMANN T, GARGALLOCABALLERO R, FROMM F, SEYLLER T, RAMSTEINER M, TRAMPERT A, GEELHAAR L, LOPES JMJ, RIECHERT H

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

CARBON

OLIVEIRA MH, SCHUMANN T, FROMM F, KOCH R, OSTLER M, RAMSTEINER M, SEYLLER T, LOPES JMJ, RIECHERT H

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces (vol 85, 235402, 2012)

PHYSICAL REVIEW B

SCHUMANN T, FRIEDLAND KJ, OLIVEIRA MH, TAHRAOUI A, LOPES JMJ, RIECHERT H

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

PHYSICAL REVIEW B

SCHUMANN T, FRIEDLAND KJ, OLIVEIRA MH, TAHRAOUI A, LOPES JMJ, RIECHERT H

Influence of the silicon carbide surface morphology on the epitaxial graphene formation

APPLIED PHYSICS LETTERS

OLIVEIRA MH, SCHUMANN T, RAMSTEINER M, LOPES JMJ, RIECHERT H

Graphene/GaN Schottky diodes: Stability at elevated temperatures

APPLIED PHYSICS LETTERS

TONGAY S, LEMAITRE M, SCHUMANN T, BERKE K, APPLETON BR, GILA B, HEBARD AF