国家/地区 India（6） England（2）
关键词 GRAPHENE（6） CONTACT RESISTANCE（4） METAL（3）
VACANCY（3） DFT（2） NEGF（2）
QUANTUMATK（2）
出版物 IEEE TRANSACTIONS O.（4） IEEE ELECTRON DEVIC.（2）
出版时间 2021（2） 2023（2）
机构 INDIAN INST .（3）
作者 SHRIVASTAVA M（8）

On the ESD Behavior of Large-Area CVD Graphene Transistors: Physical Insights and Technology Implications

IEEE TRANSACTIONS ON ELECTRON DEVICES

KRANTHI NK, MISHRA A, MEERSHA A, SHRIVASTAVA M

Observing non-equilibrium state of transport through graphene channel at the nano-second time-scale

APPLIED PHYSICS LETTERS

MISHRA A, MEERSHA A, RAGHAVAN S, SHRIVASTAVA M

Physical Insights on the Ambiguous Metal-Graphene Interface and Proposal for Improved Contact Resistance

IEEE TRANSACTIONS ON ELECTRON DEVICES

GHATGE M, SHRIVASTAVA M

Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

IEEE ELECTRON DEVICE LETTERS

MEERSHA A, KUMAR J, MISHRA A, VARIAR HB, SHRIVASTAVA M

Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

IEEE ELECTRON DEVICE LETTERS

MEERSHA A, KUMAR J, MISHRA A, VARIAR HB, SHRIVASTAVA M

Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

KUMAR J, MEERSHA A, VARIAR HB, MISHRA A, SHRIVASTAVA M

Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits

IEEE TRANSACTIONS ON ELECTRON DEVICES

MISHRA A, MEERSHA A, KRANTHI NK, KUMAR J, BELLAMKONDA NSV, VARIAR HB, SHRIVASTAVA M

Introduction of Near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight

ACS OMEGA

KUMAR J, ANSH, SHRIVASTAVA M