国家/地区 Korea（3） Usa（2）
关键词 GRAPHENE（3） NONVOLATILE MEMORY（3） CHARGETRAP MEMORY（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2012（6）
机构 DONGGUK UNIV.（3）
作者 SONG EB（6）

Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

APPLIED PHYSICS LETTERS

LEE S, SONG EB, KIM SM, LEE Y, SEO DH, SEO S, WANG KL

Influence of Edge Defects, Vacancies, and Potential Fluctuations on Transport Properties of Extremely Scaled Graphene Nanoribbons

IEEE TRANSACTIONS ON ELECTRON DEVICES

POLJAK M, SONG EB, WANG MS, SULIGOJ T, WANG KL

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Transparent and Flexible Graphene Charge-Trap Memory

ACS NANO

KIM SM, SONG EB, LEE S, ZHU JF, SEO DH, MECKLENBURG M, SEO S, WANG KL

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

APPLIED PHYSICS LETTERS

LEE S, SONG EB, KIM S, SEO DH, SEO S, KANG TW, WANG KL