国家/地区 Usa（23）
关键词 GRAPHENE（9） CVD（3） PHONON（2）
RAMAN（2）
出版物 APPLIED PHYSICS LET.（7） NANO LETTERS（3） ACS NANO（2）
JOURNAL OF NANOSCIE.（2） PHYSICAL REVIEW B（2）
出版时间 2013（5） 2012（4） 2008（3） 2009（3） 2010（3） 2014（2） 2016（2）
机构 CORNELL UNIV（18） UNIV S CAROL.（4）
作者 SPENCER MG（23）

Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts

NANO LETTERS

KWAK JY, HWANG J, CALDERON B, ALSALMAN H, MUNOZ N, SCHUTTER B, SPENCER MG

Metal Free Growth of Graphene on Quartz Substrate Using Chemical Vapor Deposition (CVD)

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

HWANG J, KIM M, CHA HY, SPENCER MG, LEE JW

Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer

PHYSICAL REVIEW B

SHIVARAMAN S, JOBST J, WALDMANN D, WEBER HB, SPENCER MG

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

ACS NANO

BUTLER SZ, HOLLEN SM, CAO LY, CUI Y, GUPTA JA, GUTIERREZ HR, HEINZ TF, HONG SS, HUANG JX, ISMACH AF, JOHNSTONHALPERIN E, KUNO M, PLASHNITSA VV, ROBINSON RD, RUOFF RS, SALAHUDDIN S, SHAN J, SHI L, SPENCER MG, TERRONES M, WINDL W, GOLDBERGER JE

CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC

JOURNAL OF CRYSTAL GROWTH

HWANG J, KIM M, SHIELDS VB, SPENCER MG

Electrically tunable molecular doping of graphene

APPLIED PHYSICS LETTERS

SINGH AK, UDDIN MA, TOLSON JT, MAIREAFELI H, SBROCKEY N, TOMPA GS, SPENCER MG, VOGT T, SUDARSHAN TS, KOLEY G

van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

ACS NANO

HWANG J, KIM M, CAMPBELL D, ALSALMAN HA, KWAK JY, SHIVARAMAN S, WOLL AR, SINGH AK, HENNIG RG, GORANTLA S, RUMMELI MH, SPENCER MG

Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer

NANOTECHNOLOGY

KIM M, HWANG J, LEPAK LA, LEE JW, SPENCER MG, TIWARI S

Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide

APPLIED PHYSICS LETTERS

SHIVARAMAN S, HERMAN LH, RANA F, PARK J, SPENCER MG

SiC surface orientation and Si loss rate effects on epitaxial graphene

NANOSCALE RESEARCH LETTERS

KIM M, HWANG J, SHIELDS VB, TIWARI S, SPENCER MG, LEE JW