国家/地区 Sweden(23) Germany(2) Iran(2)
关键词 GRAPHENE(17) FIELDEFFECT TRANSIS.(5) FIELDEFFECT TRANSIS.(4)
MAXIMUM FREQUENCY O.(4) SUBHARMONIC RESISTI.(4) TRANSIT FREQUENCY(4)
DETECTOR(2) DIELECTRIC(2) LOGIC GATE(2)
MICROWAVE FIELDEFFE.(2) OPTICAL PHONON(2) RECTENNA(2)
RESISTANCE(2) SATURATION VELOCITY(2) TERAHERTZ DETECTOR(2)
出版物 APPLIED PHYSICS LET.(5) IEEE TRANSACTIONS O.(5) IEEE ELECTRON DEVIC.(4)
IEEE TRANSACTIONS O.(3) IEEE TRANSACTIONS O.(2)
出版时间 2012(5) 2017(5) 2020(5) 2021(4) 2013(3) 2014(2)
机构 CHALMERS UNI.(15) CHALMERS(5)
作者 STAKE J(29)

NANOSCALE ADVANCES

FEIJOO PC, PASADAS F, BONMANN M, ASAD M, YANG XN, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J, JIMENEZ D

LIGHTSCIENCE APPLICATIONS

SOLTANI A, KUSCHEWSKI F, BONMANN M, GENERALOV A, VOROBIEV A, LUDWIG F, WIECHA MM, CIBIRAITE D, WALLA F, WINNERL S, KEHR SC, ENG LM, STAKE J, ROSKOS HG

IEEE TRANSACTIONS ON ELECTRON DEVICES

BONMANN M, KRIVIC M, YANG XX, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE TECHNOLOGY

YANG XX, VOROBIEV A, JEPPSON K, STAKE J

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

NANO LETTERS

ZAK A, ANDERSSON MA, BAUER M, MATUKAS J, LISAUSKAS A, ROSKOS HG, STAKE J

APPLIED PHYSICS LETTERS

TANZID M, ANDERSSON MA, SUN J, STAKE J

APPLIED PHYSICS LETTERS

ANDERSSON MA, VOROBIEV A, SUN J, YURGENS A, GEVORGIAN S, STAKE J

IEEE JOURNAL OF QUANTUM ELECTRONICS

AMIRMAZLAGHANI M, RAISSI F, HABIBPOUR O, VUKUSIC J, STAKE J