国家/地区 China（3） Singapore（2）
关键词 NEGATIVE BIAS TEMPE.（2） POSITIVE BIAS TEMPE.（2）
出版物
出版时间 2012（3） 2013（2）
机构 S UNIV SCI .（3） NANYANG TECH.（2）
作者 TRAN XA（5）

Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LIU WJ, SUN XW, TRAN XA, FANG Z, WANG ZR, WANG F, WU L, ZHANG JF, WEI J, ZHU HL, YU HY

Characteristics of a Single-Layer Graphene Field Effect Transistor with UV/Ozone Treatment

ECS SOLID STATE LETTERS

LIU WJ, TRAN XA, LIU XB, WEI J, YU HY, SUN XW

Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

IEEE TRANSACTIONS ON DEVICE MATERIALS RELIABILITY

LIU WJ, SUN XW, TRAN XA, FANG Z, WANG ZR, WANG F, WU L, ZHANG JF, WEI J, ZHU HL, YU HY

Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors

IEEE ELECTRON DEVICE LETTERS

LIU WJ, SUN XW, FANG Z, WANG ZR, TRAN XA, WANG F, WU L, NG GI, ZHANG JF, WEI J, ZHU HL, YU HY

Mechanism of Different Switching Directions in Graphene Oxide Based RRAM

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

WANG ZR, TJOA V, WU L, LIU WJ, FANG Z, TRAN XA, WEI J, ZHU WG, YU HY