国家/地区 Japan（3）
关键词 BAND GAP（2） BILAYER GRAPHENE（2） HETEROSTRUCTURE（2）
出版物
出版时间
机构 UNIV TOKYO（2）
作者 UWANNO T（3）

Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene

ACS NANO

SOLISFERNANDEZ P, TERAO Y, KAWAHARA K, NISHIYAMA W, UWANNO T, LIN YC, YAMAMOTO K, NAKASHIMA H, NAGASHIO K, HIBINO H, SUENAGA K, AGO H

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS APPLIED MATERIALS INTERFACES

UWANNO T, TANIGUCHI T, WATANABE K, NAGASHIO K

Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system

2D MATERIALS

UWANNO T, HATTORI Y, TANIGUCHI T, WATANABE K, NAGASHIO K