国家/地区 Russia（7） Japan（3）
关键词
出版物 JOURNAL OF APPLIED .（4）
出版时间 2013（3） 2014（3）
机构 RUSSIAN ACAD.（6） TOHOKU UNIV（3）
作者 VYURKOV V（10）

Carrier-carrier scattering and negative dynamic conductivity in pumped graphene

OPTICS EXPRESS

SVINTSOV D, RYZHII V, SATOU A, OTSUJI T, VYURKOV V

Damping mechanism of terahertz plasmons in graphene on heavily doped substrate

JOURNAL OF APPLIED PHYSICS

SATOU A, KOSEKI Y, RYZHII V, VYURKOV V, OTSUJI T

All-graphene field-effect transistor based on lateral tunnelling

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SVINTSOV D, VYURKOV V, ORLIKOVSKY A, RYZHII V, OTSUJI T

Hydrodynamic electron transport and nonlinear waves in graphene

PHYSICAL REVIEW B

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Double injection in graphene p-i-n structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, SEMENIKHIN I, RYZHII M, SVINTSOV D, VYURKOV V, SATOU A, OTSUJI T

Voltage-controlled surface plasmon-polaritons in double graphene layer structures

JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Hydrodynamic model for electron-hole plasma in graphene

JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, YURCHENKO S, OTSUJI T, RYZHII V

Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics

JAPANESE JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Effect of the Coulomb Scattering on Graphene Conductivity

JETP LETTERS

VYURKOV V, RYZHII V

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

SCIENTIFIC REPORTS

ALYMOV G, VYURKOV V, RYZHII V, SVINTSOV D