国家/地区 Germany（13）
关键词
出版物 APPLIED PHYSICS LET.（3） PHYSICAL REVIEW B（3） NATURE MATERIALS（2）
出版时间 2011（4） 2012（4） 2013（3） 2014（2）
机构 UNIV ERLANGE.（13）
作者 WALDMANN D（15）

Dislocations in bilayer graphene

NATURE

BUTZ B, DOLLE C, NIEKIEL F, WEBER K, WALDMANN D, WEBER HB, MEYER B, SPIECKER E

Epitaxial graphene as an electrode material: a transistor testbed for organic and all-carbon semiconductors

RSC ADVANCES

BAYAYA E, WALDMANN D, KRIEGER M, WEBER HB

Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer (vol 87, 195425, 2013)

PHYSICAL REVIEW B

SHIVARAMAN S, JOBST J, WALDMANN D, WEBER HB, SPENCER MG

Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer

PHYSICAL REVIEW B

SHIVARAMAN S, JOBST J, WALDMANN D, WEBER HB, SPENCER MG

Robust Graphene Membranes in a Silicon Carbide Frame

ACS NANO

WALDMANN D, BUTZ B, BAUER S, ENGLERT JM, JOBST J, ULLMANN K, FROMM F, AMMON M, ENZELBERGEE M, HIRSCH A, MAIER S, SCHMUKI P, SEYLLER T, SPIECKER E, WEBERT HB

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

NATURE COMMUNICATIONS

HERTEL S, WALDMANN D, JOBST J, ALBERT A, ALBRECHT M, RESHANOV S, SCHONER A, KRIEGER M, WEBER HB

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

APPLIED PHYSICS LETTERS

KRACH F, HERTEL S, WALDMANN D, JOBST J, KRIEGER M, RESHANOV S, SCHONER A, WEBER HB

Electron-Electron Interaction in the Magnetoresistance of Graphene

PHYSICAL REVIEW LETTERS

JOBST J, WALDMANN D, GORNYI IV, MIRLIN AD, WEBER HB

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T