| 国家/地区 |
China(2)
|
| 关键词 | |
| 出版物 | |
| 出版时间 | |
| 机构 |
NATL CTR NANOSCI TECHNOL(2)
|
| 作者 |
WANG BP(2)
|
IEEE ELECTRON DEVICE LETTERS
LI C, YANG XX, DING SY, DAI Q, QIU XH, LEI W, ZHANG XB, WANG BP
High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetector
ACS APPLIED MATERIALS INTERFACES
LIU X, JI XB, LIU MJ, LIU NZ, TAO Z, DAI Q, WEI L, LI C, ZHANG XB, WANG BP
