国家/地区 Singapore（4）
关键词 SILICON CARBIDE（5）
出版物 ACS NANO（4）
出版时间
机构 NATL UNIV SI.（4）
作者 WEE ATS（5）

Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

ACS NANO

WAN W, LI H, HUANG H, WONG SH, LV L, GAO YL, WEE ATS

Anomalous scaling behaviour of cobalt cluster size distributions on graphite, epitaxial graphene and carbon-rich (6 root 3 x 6 root 3)R30 degrees

SURFACE SCIENCE

POON SW, WEE ATS, TOK ES

Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

ACS NANO

WONG SL, HUANG H, WANG YZ, CAO L, QI DC, SANTOSO I, CHEN W, WEE ATS

Structural and Electronic Properties of PTCDA Thin Films on Epitaxial Graphene

ACS NANO

HUANG H, CHEN S, GAO XY, CHEN W, WEE ATS

Bottom-up Growth of Epitaxial Graphene on 6H-SiC(0001)

ACS NANO

HUANG H, CHEN W, CHEN S, WEE ATS