国家/地区 China（12）
关键词 GRAPHENE OXIDE（3） GRAPHENE（2） GRAPHENE QUANTUM DO.（2）
RESISTIVE SWITCHING（2） TRANSISTOR（2）
出版物 NANOMATERIALS（3） NANO（2）
出版时间 2021（3） 2022（3）
机构 HEILONGJIANG.（4）
作者 WEN DZ（12）

Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

NANOMATERIALS

WANG L, WANG JY, WEN DZ

Eliminating negative-set behavior by adding a graphene blocking layer in resistive switching memory devices based on epoxy resin

APPLIED PHYSICS EXPRESS

SUN YM, WEN DZ, SUN FY

Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

NANO

LU JG, SUN YM, WEN DZ

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

SCIENTIFIC REPORTS

SUN YM, WEN DZ, BAI XD, LU JG, AI CP

Nonvolatile memory devices based on poly(vinyl alcohol) plus graphene oxide hybrid composites

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

SUN YM, LU JG, AI CP, WEN DZ

Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots

NANOMATERIALS

WANG L, ZHANG YK, ZHANG P, WEN DZ

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

NANOMATERIALS

WANG L, YANG J, ZHANG YK, WEN DZ

Tunable multistate data storage device based on silkworm hemolymph and graphene oxide

CERAMICS INTERNATIONAL

WANG L, ZHU HY, WEN DZ

Graphene film transistors based on asymmetric gate design combining with chemical doping

MATERIALS SCIENCE ENGINEERING BADVANCED FUNCTIONAL SOLIDSTATE MATERIALS

SUN YM, HE NA, WEN DZ

Effect of Graphene Composite on Biological Egg Protein Resistance Switching Memory Properties

NANO

LU JG, SUN YM, WEN DZ