国家/地区 Usa（12）
关键词 GRAPHENE（2）
出版物 PHYSICAL REVIEW LET.（5） NANO LETTERS（2） PHYSICAL REVIEW B（2）
出版时间 2011（3） 2009（2） 2012（2） 2013（2）
机构 HARVARD UNIV（7） STANFORD UNI.（5）
作者 WILLIAMS JR（13）

Selective Equilibration of Spin-Polarized Quantum Hall Edge States in Graphene

PHYSICAL REVIEW LETTERS

AMET F, WILLIAMS JR, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D

Insulating Behavior at the Neutrality Point in Single-Layer Graphene

PHYSICAL REVIEW LETTERS

AMET F, WILLIAMS JR, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D

Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices (vol 12, pg 4449, 2012)

NANO LETTERS

GARCIA AGF, NEUMANN M, AMET F, WILLIAMS JR, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D

Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices

NANO LETTERS

GARCIA AGF, NEUMANN M, AMET F, WILLIAMS JR, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D

Tunneling spectroscopy of graphene-boron-nitride heterostructures

PHYSICAL REVIEW B

AMET F, WILLIAMS JR, GARCIA AGF, YANKOWITZ M, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D

Snake States along Graphene p-n Junctions

PHYSICAL REVIEW LETTERS

WILLIAMS JR, MARCUS CM

Gate-Defined Graphene Quantum Point Contact in the Quantum Hall Regime

PHYSICAL REVIEW LETTERS

NAKAHARAI S, WILLIAMS JR, MARCUS CM

Gate-controlled guiding of electrons in graphene

NATURE NANOTECHNOLOGY

WILLIAMS JR, LOW T, LUNDSTROM MS, MARCUS CM

Etching of Graphene Devices with a Helium Ion Beam

ACS NANO

LEMME MC, BELL DC, WILLIAMS JR, STERN LA, BAUGHER BWH, JARILLOHERRERO P, MARCUS CM

Quantum Hall conductance of two-terminal graphene devices

PHYSICAL REVIEW B

WILLIAMS JR, ABANIN DA, DICARLO L, LEVITOV LS, MARCUS CM