国家/地区 China（5）
关键词
出版物 MICROELECTRONICS RE.（2）
出版时间 2019（3）
机构 CHINESE ACAD SCI（5）
作者 XI K（5）

Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices

MICROELECTRONICS RELIABILITY

XI K, BI JS, XU YN, LI YD, ZHANG ZG, LIU M

Total ionizing dose effects on graphene-based charge-trapping memory

SCIENCE CHINAINFORMATION SCIENCES

XI K, BI JS, MAJUMDAR S, LI B, LIU J, XU YN, LIU M

The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer

MICROELECTRONICS RELIABILITY

XU YN, BI JS, LI YD, XI K, FAN LJ, LIU M, SANDIP M, LUO L

The effects of gamma-ray irradiation on graphene/n-Si Schottky diodes

APPLIED PHYSICS EXPRESS

XU YN, BI JS, XI K, LIU M

Impact of gamma-ray irradiation on graphene nano-disc non-volatile memory

APPLIED PHYSICS LETTERS

XI K, BI JS, HU Y, LI B, LIU J, XU YN, LIU M